transistor(pnp) features ? large i c . icmax .= -500 ma ? low v ce(sat) . ideal for low-voltage operation. marking : hp, hq, hr maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage -40 v v ceo collector-emitter voltage -32 v v ebo emitter-base voltage -5 v i c collector current -continuous -500 ma p c collector power dissipation 200 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-100 a,i e =0 -40 v collector-emitter breakdown voltage v (br)ceo i c =-1ma,i b =0 -32 v emitter-base breakdown voltage v (br)ebo i e =-100 a,i c =0 -5 v collector cut-off current i cbo v cb =-20v,i e =0 -1 a emitter cut-off current i ebo v eb =-4v,i c =0 -1 a dc current gain h fe v ce =-3v,i c =-10ma 82 390 collector-emitter saturation voltage v ce(sat) i c =-100ma,i b =-10ma -0.4 v transition frequency f t v ce =-5v,i c =-20ma,f=100mhz 200 mhz collector output capacitance c ob v cb =-10v,i e =0,f=1mhz 7 pf classification of h fe rank p q r range 82 - 180 120 - 270 180 - 390 sot-23 1. base 2. emitter 3. collector date:2011/05 2sa1 036 1 date:2011/05 www.htsemi.com semiconductor jinyu
typical characteristics 2 date:2011/05 www.htsemi.com semiconductor jinyu 2sa1 0 3 6
|
